Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
1200 V
Series
NTH
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.028 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.3
Number of Elements per Chip
1
Transistor Material
SiC
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P.O.A.
SiC N-Channel MOSFET Transistor, 84 A, 1200 V, 4-Pin TO-247-4 onsemi NTH4L020N120SC1
450
P.O.A.
SiC N-Channel MOSFET Transistor, 84 A, 1200 V, 4-Pin TO-247-4 onsemi NTH4L020N120SC1
Stock information temporarily unavailable.
450
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
1200 V
Series
NTH
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.028 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.3
Number of Elements per Chip
1
Transistor Material
SiC