Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
185 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Series
NTMFS5C430N
Mounting Type
Surface Mount
Pin Count
4 + Tab
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
106 W
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
5.1mm
Length
6.1mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Country of Origin
Malaysia
Product details
N-Channel Power MOSFET, 40V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
P.O.A.
1
P.O.A.
1
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Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
185 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Series
NTMFS5C430N
Mounting Type
Surface Mount
Pin Count
4 + Tab
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
106 W
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
5.1mm
Length
6.1mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Country of Origin
Malaysia
Product details