Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
330 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.9mm
Length
5mm
Typical Gate Charge @ Vgs
143 nC @ 10 V
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
1.2mm
Minimum Operating Temperature
-55 °C
P.O.A.
Standard
1
P.O.A.
Standard
1
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Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
330 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.9mm
Length
5mm
Typical Gate Charge @ Vgs
143 nC @ 10 V
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
1.2mm
Minimum Operating Temperature
-55 °C