onsemi N-Channel MOSFET, 554.5 A, 40 V, 8-Pin DFNW8 NTMTS0D6N04CLTXG

RS Stock No.: 186-1287Brand: onsemiManufacturers Part No.: NTMTS0D6N04CLTXG
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

554.5 A

Maximum Drain Source Voltage

40 V

Package Type

DFNW8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

660 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

245.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

8mm

Length

8.1mm

Typical Gate Charge @ Vgs

126 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.15mm

Stock information temporarily unavailable.

P.O.A.

onsemi N-Channel MOSFET, 554.5 A, 40 V, 8-Pin DFNW8 NTMTS0D6N04CLTXG

P.O.A.

onsemi N-Channel MOSFET, 554.5 A, 40 V, 8-Pin DFNW8 NTMTS0D6N04CLTXG
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

554.5 A

Maximum Drain Source Voltage

40 V

Package Type

DFNW8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

660 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

245.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

8mm

Length

8.1mm

Typical Gate Charge @ Vgs

126 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.15mm