Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Typical Gate Charge @ Vgs
3.1 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
3.04mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Product details
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
200
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
200
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Typical Gate Charge @ Vgs
3.1 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
3.04mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Product details
