Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.37 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
329 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
6.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.9mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
50
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
50
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.37 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
329 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
6.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.9mm
Minimum Operating Temperature
-55 °C
Product details
