N-Channel MOSFET, 20 A, 650 V, 3-Pin D2PAK onsemi NVB190N65S3FOS

Brand

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

162 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Typical Gate Charge @ Vgs

34 @ 10 V nC

Length

10.67mm

Maximum Operating Temperature

+150 °C

Width

9.65mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Automotive Standard

AEC-Q101

Height

4.58mm