Dual N/P-Channel MOSFET, 2.5 A, 3 A, 60 V, 8-Pin SOT-28FL, VEC8 onsemi VEC2616-TL-W
Technical documents
Specifications
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
2.5 A, 3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-28FL, VEC8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
116 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Length
2.9mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
2.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
0.73mm
Forward Diode Voltage
1.2V
Country of Origin
China
Product details
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
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P.O.A.
10
P.O.A.
10
Technical documents
Specifications
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
2.5 A, 3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-28FL, VEC8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
116 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Length
2.9mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
2.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
0.73mm
Forward Diode Voltage
1.2V
Country of Origin
China
Product details
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.