Renesas BEAM N-Channel MOSFET, 50 A, 30 V, 8-Pin WPAK RJK0391DPA-00#J5A

RS Stock No.: 234-7153PBrand: Renesas ElectronicsManufacturers Part No.: RJK0391DPA-00#J5A
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Technical documents

Specifications

Brand

Renesas Electronics

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

30 V

Series

BEAM

Package Type

WPAK

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0029 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Renesas BEAM N-Channel MOSFET, 50 A, 30 V, 8-Pin WPAK RJK0391DPA-00#J5A
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Renesas BEAM N-Channel MOSFET, 50 A, 30 V, 8-Pin WPAK RJK0391DPA-00#J5A

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Renesas Electronics

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

30 V

Series

BEAM

Package Type

WPAK

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0029 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1