ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007
Technical documents
Specifications
Brand
ROHMProduct Type
SiC Power Module
Channel Type
Type N
Series
BSM
Pin Count
4
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Width
45.6 mm
Length
122mm
Height
17mm
Number of Elements per Chip
2
Country of Origin
Japan
Product details
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
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P.O.A.
1
P.O.A.
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1
Technical documents
Specifications
Brand
ROHMProduct Type
SiC Power Module
Channel Type
Type N
Series
BSM
Pin Count
4
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Width
45.6 mm
Length
122mm
Height
17mm
Number of Elements per Chip
2
Country of Origin
Japan
Product details
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature