Dual N/P-Channel MOSFET, 18 A, 15 A, 30 V, 8-Pin HSOP8 ROHM HP8MA2TB1

Brand

Channel Type

N, P

Maximum Continuous Drain Current

18 A, 15 A

Maximum Drain Source Voltage

30 V

Series

HP8MA2

Package Type

HSOP8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5 (N Channel) V, 2.5 (P Channel) V

Minimum Gate Threshold Voltage

1 (N Channel) V, 1 (P Channel) V

Maximum Power Dissipation

7 W

Maximum Gate Source Voltage

±20 V, ±20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Width

5.8mm

Typical Gate Charge @ Vgs

22 nC @ 10 V (N Channel), 25 nC @ 10 V (P Channel)

Minimum Operating Temperature

-55 °C

Height

1.1mm

Country of Origin

Thailand