N-Channel MOSFET, 5 A, 20 V, 6-Pin TSMT-6 ROHM RQ6C050UNTR

RS Stock No.: 177-6585Brand: ROHMManufacturers Part No.: RQ6C050UNTR
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Technical documents

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

20 V

Series

RQ6C050UN

Package Type

TSMT-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±10 V

Width

1.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

Thailand

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P.O.A.

N-Channel MOSFET, 5 A, 20 V, 6-Pin TSMT-6 ROHM RQ6C050UNTR

P.O.A.

N-Channel MOSFET, 5 A, 20 V, 6-Pin TSMT-6 ROHM RQ6C050UNTR
Stock information temporarily unavailable.

Technical documents

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

20 V

Series

RQ6C050UN

Package Type

TSMT-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±10 V

Width

1.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

Thailand