Technical documents
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Series
RSJ250P10
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
50 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
9mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.1mm
Typical Gate Charge @ Vgs
60 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
4.5mm
Forward Diode Voltage
1.2V
Country of Origin
Korea, Republic Of
Product details
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
P.O.A.
Standard
1
P.O.A.
Standard
1
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Technical documents
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Series
RSJ250P10
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
50 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
9mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.1mm
Typical Gate Charge @ Vgs
60 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
4.5mm
Forward Diode Voltage
1.2V
Country of Origin
Korea, Republic Of
Product details