N-Channel MOSFET, 3.7 A, 1700 V, 3-Pin TO-3PFM ROHM SCT2H12NZGC11

RS Stock No.: 133-2860Brand: ROHMManufacturers Part No.: SCT2H12NZGC11
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Technical documents

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

3.7 A

Maximum Drain Source Voltage

1700 V

Series

SCT2H12NZ

Package Type

TO-3PFM

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +22 V

Transistor Material

Si

Length

16mm

Typical Gate Charge @ Vgs

14 nC @ 18 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

21mm

Forward Diode Voltage

4.3V

Product details

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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P.O.A.

N-Channel MOSFET, 3.7 A, 1700 V, 3-Pin TO-3PFM ROHM SCT2H12NZGC11
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Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

N-Channel MOSFET, 3.7 A, 1700 V, 3-Pin TO-3PFM ROHM SCT2H12NZGC11
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Technical documents

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

3.7 A

Maximum Drain Source Voltage

1700 V

Series

SCT2H12NZ

Package Type

TO-3PFM

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +22 V

Transistor Material

Si

Length

16mm

Typical Gate Charge @ Vgs

14 nC @ 18 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

21mm

Forward Diode Voltage

4.3V

Product details

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor