ROHM SiC N-Channel MOSFET, 93 A, 650 V, 3-Pin TO-247N SCT3022ALGC11

RS Stock No.: 150-1518Brand: ROHMManufacturers Part No.: SCT3022ALGC11
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Technical documents

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

93 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247N

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

29 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

262 W

Transistor Configuration

Single

Maximum Gate Source Voltage

22 V

Number of Elements per Chip

1

Width

5mm

Length

16mm

Typical Gate Charge @ Vgs

133 nC @ 18 V

Transistor Material

SiC

Maximum Operating Temperature

+175 °C

Height

21mm

P.O.A.

ROHM SiC N-Channel MOSFET, 93 A, 650 V, 3-Pin TO-247N SCT3022ALGC11

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

ROHM SiC N-Channel MOSFET, 93 A, 650 V, 3-Pin TO-247N SCT3022ALGC11

Stock information temporarily unavailable.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

93 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247N

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

29 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

262 W

Transistor Configuration

Single

Maximum Gate Source Voltage

22 V

Number of Elements per Chip

1

Width

5mm

Length

16mm

Typical Gate Charge @ Vgs

133 nC @ 18 V

Transistor Material

SiC

Maximum Operating Temperature

+175 °C

Height

21mm