Dual N-Channel MOSFET, 30 A, 70 V, 5-Pin DR Semelab D1028UK

RS Stock No.: 738-7682Brand: SemelabManufacturers Part No.: D1028UK
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Technical documents

Specifications

Brand

Semelab

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

70 V

Series

TetraFET

Package Type

DR

Mounting Type

Screw Mount

Pin Count

5

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

7V

Maximum Power Dissipation

438 W

Transistor Configuration

Common Source

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+200 °C

Length

34.03mm

Width

10.16mm

Transistor Material

Si

Height

5.08mm

Country of Origin

United Kingdom

Product details

RF MOSFET Transistors, Semelab

MOSFET Transistors, Semelab

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P.O.A.

Dual N-Channel MOSFET, 30 A, 70 V, 5-Pin DR Semelab D1028UK
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Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

Dual N-Channel MOSFET, 30 A, 70 V, 5-Pin DR Semelab D1028UK
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Technical documents

Specifications

Brand

Semelab

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

70 V

Series

TetraFET

Package Type

DR

Mounting Type

Screw Mount

Pin Count

5

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

7V

Maximum Power Dissipation

438 W

Transistor Configuration

Common Source

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+200 °C

Length

34.03mm

Width

10.16mm

Transistor Material

Si

Height

5.08mm

Country of Origin

United Kingdom

Product details

RF MOSFET Transistors, Semelab

MOSFET Transistors, Semelab