Technical documents
Specifications
Brand
SemelabChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
125 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
7V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+200 °C
Length
4.06mm
Width
5.08mm
Transistor Material
Si
Series
TetraFET
Height
2.18mm
Country of Origin
United Kingdom
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Technical documents
Specifications
Brand
SemelabChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
125 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
7V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+200 °C
Length
4.06mm
Width
5.08mm
Transistor Material
Si
Series
TetraFET
Height
2.18mm
Country of Origin
United Kingdom