Starpower DM Series SiC N-Channel MOSFET, 118 A, 1200 V, 4-Pin Discrete DM170S12TDRB

RS Stock No.: 427-760Brand: StarpowerManufacturers Part No.: DM170S12TDRB
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Technical documents

Specifications

Brand

Starpower

Channel Type

N

Maximum Continuous Drain Current

118 A

Maximum Drain Source Voltage

1200 V

Package Type

Discrete

Series

DM Series

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

Country of Origin

China

P.O.A.

Starpower DM Series SiC N-Channel MOSFET, 118 A, 1200 V, 4-Pin Discrete DM170S12TDRB

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

Starpower DM Series SiC N-Channel MOSFET, 118 A, 1200 V, 4-Pin Discrete DM170S12TDRB

Stock information temporarily unavailable.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Starpower

Channel Type

N

Maximum Continuous Drain Current

118 A

Maximum Drain Source Voltage

1200 V

Package Type

Discrete

Series

DM Series

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

Country of Origin

China