Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
900V
Package Type
H2PAK-7
Series
SCT
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
12mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
625W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
138nC
Forward Voltage Vf
2.8V
Maximum Operating Temperature
175°C
Width
10.4 mm
Height
4.8mm
Length
15.25mm
Standards/Approvals
RoHS, AEC-Q101
Automotive Standard
AEC-Q101
Stock information temporarily unavailable.
P.O.A.
Standard
1
P.O.A.
Stock information temporarily unavailable.
Standard
1
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
900V
Package Type
H2PAK-7
Series
SCT
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
12mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
625W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
138nC
Forward Voltage Vf
2.8V
Maximum Operating Temperature
175°C
Width
10.4 mm
Height
4.8mm
Length
15.25mm
Standards/Approvals
RoHS, AEC-Q101
Automotive Standard
AEC-Q101
