STMicroelectronics SCT Type N-Channel MOSFET, 55 A, 650 V Enhancement, 7-Pin H2PAK-7

RS Stock No.: 215-226PBrand: STMicroelectronicsManufacturers Part No.: SCT018H65G3AG
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Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK-7

Series

SCT

Mount Type

Through Hole

Pin Count

7

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

79.4nC

Maximum Power Dissipation Pd

385W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

75°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Country of Origin

China

Stock information temporarily unavailable.

P.O.A.

STMicroelectronics SCT Type N-Channel MOSFET, 55 A, 650 V Enhancement, 7-Pin H2PAK-7
Select packaging type

P.O.A.

STMicroelectronics SCT Type N-Channel MOSFET, 55 A, 650 V Enhancement, 7-Pin H2PAK-7

Stock information temporarily unavailable.

Select packaging type

Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK-7

Series

SCT

Mount Type

Through Hole

Pin Count

7

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

79.4nC

Maximum Power Dissipation Pd

385W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

75°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Country of Origin

China