STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG

Brand

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Package Type

HIP-247-3

Series

SCT

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

398W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

76nC

Forward Voltage Vf

2.6V

Maximum Operating Temperature

200°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Automotive Standard

AEC-Q101

Country of Origin

China