Technical Documents
Specifications
Brand
STMicroelectronicsArchived Specification Attributes
Series : STPOWER Gen3 SiC MOSFET<BR/>Channel Type : N<BR/>Maximum Continuous Drain Current (Id) : 56 A<BR/>Maximum Drain Source Voltage (Vds) : 1.2 kV<BR/>Channel Mode : Enhancement<BR/>Pin Count : 4<BR/>Package Type : Hip-247-4<BR/>Automotive Standard : AEC-Q101<BR/>Height : 5.15 mm<BR/>Length : 35.9 mm<BR/>Maximum Drain Source Resistance (Rds) : 37 mΩ<BR/>Maximum Gate Source Voltage (Vgs) : 22 V<BR/>Maximum Operating Temperature : 200 °C<BR/>Maximum Power Dissipation (Pd) : 389 W<BR/>Minimum Operating Temperature : -55 °C<BR/>Mount Type : Through Hole<BR/>Standards/Approvals : No<BR/>Typical Gate Charge (Qg) @ Vgs : 73 nC<BR/>Width : 15.9 mm
Country of Origin
China
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P.O.A.
Each (In a Tube of 30) (ex VAT)
30
P.O.A.
Each (In a Tube of 30) (ex VAT)
Stock information temporarily unavailable.
30
Technical Documents
Specifications
Brand
STMicroelectronicsArchived Specification Attributes
Series : STPOWER Gen3 SiC MOSFET<BR/>Channel Type : N<BR/>Maximum Continuous Drain Current (Id) : 56 A<BR/>Maximum Drain Source Voltage (Vds) : 1.2 kV<BR/>Channel Mode : Enhancement<BR/>Pin Count : 4<BR/>Package Type : Hip-247-4<BR/>Automotive Standard : AEC-Q101<BR/>Height : 5.15 mm<BR/>Length : 35.9 mm<BR/>Maximum Drain Source Resistance (Rds) : 37 mΩ<BR/>Maximum Gate Source Voltage (Vgs) : 22 V<BR/>Maximum Operating Temperature : 200 °C<BR/>Maximum Power Dissipation (Pd) : 389 W<BR/>Minimum Operating Temperature : -55 °C<BR/>Mount Type : Through Hole<BR/>Standards/Approvals : No<BR/>Typical Gate Charge (Qg) @ Vgs : 73 nC<BR/>Width : 15.9 mm
Country of Origin
China
