STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7

RS Stock No.: 214-955PBrand: STMicroelectronicsManufacturers Part No.: SCT027H65G3AG
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Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

29mΩ

Channel Mode

Enhancement

Forward Voltage Vf

2.9V

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

48.6nC

Maximum Operating Temperature

175°C

Length

15.25mm

Standards/Approvals

RoHS, AEC-Q101

Width

10.4 mm

Height

4.8mm

Automotive Standard

AEC-Q101

Country of Origin

China

Stock information temporarily unavailable.

P.O.A.

STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7
Select packaging type

P.O.A.

STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7

Stock information temporarily unavailable.

Select packaging type

Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

29mΩ

Channel Mode

Enhancement

Forward Voltage Vf

2.9V

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

48.6nC

Maximum Operating Temperature

175°C

Length

15.25mm

Standards/Approvals

RoHS, AEC-Q101

Width

10.4 mm

Height

4.8mm

Automotive Standard

AEC-Q101

Country of Origin

China