STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 4-Pin SCT027W65G3-4AG

Name: STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 4-Pin SCT027W65G3-4AG
Brand: STMicroelectronics
SKU: 0215228

RS Stock No.: 215-228Brand: STMicroelectronicsManufacturers Part No.: SCT027W65G3-4AG

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Technical documents

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Series

SCT

Mount Type

Through Hole

Pin Count

Maximum Drain Source Resistance Rds

29mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

51nC

Maximum Power Dissipation Pd

313W

Maximum Gate Source Voltage Vgs

-10 to 22 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

Maximum Operating Temperature

200°C

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

Country of Origin

China

Stock information temporarily unavailable.

P.O.A.

Each (In a Tube of 30) (ex VAT)

STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 4-Pin SCT027W65G3-4AG

P.O.A.

Each (In a Tube of 30) (ex VAT)

STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 4-Pin SCT027W65G3-4AG

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Series

SCT

Mount Type

Through Hole

Pin Count

Maximum Drain Source Resistance Rds

29mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

51nC

Maximum Power Dissipation Pd

313W

Maximum Gate Source Voltage Vgs

-10 to 22 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

Maximum Operating Temperature

200°C

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

Country of Origin

China