SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT10N120

RS Stock No.: 202-5475Brand: STMicroelectronicsManufacturers Part No.: SCT10N120
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Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.58 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

P.O.A.

SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT10N120

30

Available in multiples of 30
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

P.O.A.

SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT10N120
Stock information temporarily unavailable.

30

Available in multiples of 30
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.58 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

SiC