Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
SiC Power Module
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Series
SCT
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Forward Voltage Vf
3.6V
Typical Gate Charge Qg @ Vgs
45nC
Maximum Power Dissipation Pd
153W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
200°C
Standards/Approvals
No
Length
10.4mm
Height
15.8mm
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
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Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
SiC Power Module
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Series
SCT
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Forward Voltage Vf
3.6V
Typical Gate Charge Qg @ Vgs
45nC
Maximum Power Dissipation Pd
153W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
200°C
Standards/Approvals
No
Length
10.4mm
Height
15.8mm
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
