STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247 SCT30N120

RS Stock No.: 907-4741Brand: STMicroelectronicsManufacturers Part No.: SCT30N120
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Technical documents

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

270W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

105nC

Forward Voltage Vf

3.5V

Maximum Operating Temperature

200°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics

Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.

MOSFET Transistors, STMicroelectronics

View all in MOSFETs

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P.O.A.

STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247 SCT30N120
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Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
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7P.O.A.
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15P.O.A.

P.O.A.

STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247 SCT30N120

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Technical documents

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

270W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

105nC

Forward Voltage Vf

3.5V

Maximum Operating Temperature

200°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics

Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.

MOSFET Transistors, STMicroelectronics