STMicroelectronics SCT SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120

RS Stock No.: 202-5479Brand: STMicroelectronicsManufacturers Part No.: SCT50N120
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Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.59 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3V

Number of Elements per Chip

1

Transistor Material

SiC

P.O.A.

STMicroelectronics SCT SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

STMicroelectronics SCT SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.59 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3V

Number of Elements per Chip

1

Transistor Material

SiC