SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTW90N65G2V

RS Stock No.: 201-0887Brand: STMicroelectronicsManufacturers Part No.: SCTW90N65G2V
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

119 A

Maximum Drain Source Voltage

650 V

Package Type

Hip247

Series

SCTW90

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.024 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Transistor Material

SiC

Number of Elements per Chip

1

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P.O.A.

SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTW90N65G2V
Select packaging type

P.O.A.

SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTW90N65G2V
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

119 A

Maximum Drain Source Voltage

650 V

Package Type

Hip247

Series

SCTW90

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.024 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Transistor Material

SiC

Number of Elements per Chip

1