STMicroelectronics SCTWA35N65G2V SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V

RS Stock No.: 204-3957Brand: STMicroelectronicsManufacturers Part No.: SCTWA35N65G2V
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCTWA35N65G2V

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.072 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

Stock information temporarily unavailable.

P.O.A.

Each (In a Tube of 30) (ex VAT)

STMicroelectronics SCTWA35N65G2V SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V

P.O.A.

Each (In a Tube of 30) (ex VAT)

STMicroelectronics SCTWA35N65G2V SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V

Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCTWA35N65G2V

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.072 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China