STMicroelectronics Single SD2931 Type N-Channel MOSFET, 20 A, 125 V Enhancement, 4-Pin M174 SD2931-10W

RS Stock No.: 917-3356Brand: STMicroelectronicsManufacturers Part No.: SD2931-10W
brand-logo
View all in MOSFETs

Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type N

Operating Frequency

230 MHz

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

125V

Output Power

150W

Package Type

M174

Series

SD2931

Mount Type

Surface

Pin Count

4

Channel Mode

Enhancement

Minimum Operating Temperature

65°C

Maximum Operating Temperature

200°C

Transistor Configuration

Single

Width

24.89 mm

Height

4.11mm

Length

26.67mm

Standards/Approvals

No

Typical Power Gain

14dB

Automotive Standard

No

Product details

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

View all in MOSFETs

Stock information temporarily unavailable.

P.O.A.

STMicroelectronics Single SD2931 Type N-Channel MOSFET, 20 A, 125 V Enhancement, 4-Pin M174 SD2931-10W
Select packaging type

P.O.A.

STMicroelectronics Single SD2931 Type N-Channel MOSFET, 20 A, 125 V Enhancement, 4-Pin M174 SD2931-10W

Stock information temporarily unavailable.

Select packaging type

Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type N

Operating Frequency

230 MHz

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

125V

Output Power

150W

Package Type

M174

Series

SD2931

Mount Type

Surface

Pin Count

4

Channel Mode

Enhancement

Minimum Operating Temperature

65°C

Maximum Operating Temperature

200°C

Transistor Configuration

Single

Width

24.89 mm

Height

4.11mm

Length

26.67mm

Standards/Approvals

No

Typical Power Gain

14dB

Automotive Standard

No

Product details

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics