STMicroelectronics G-HEMT P-Channel Transistor, 29 A, 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB

Brand

Product Type

Transistor

Channel Type

P-Channel

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

700V

Package Type

PowerFLAT

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.2nC

Maximum Power Dissipation Pd

188W

Maximum Gate Source Voltage Vgs

-6 to 7 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

8.1 mm

Length

8.1mm

Height

0.9mm

Country of Origin

China