STMicroelectronics STripFET F7 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-263
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-263
Series
STripFET F7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
12.6nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-263
Series
STripFET F7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
12.6nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.