STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263

RS Stock No.: 188-8280Brand: STMicroelectronicsManufacturers Part No.: STB11NM80T4
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Technical documents

Specifications

Product Type

MDmesh Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

STB11NM80

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.4Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-65°C

Typical Gate Charge Qg @ Vgs

43.6nC

Forward Voltage Vf

0.86V

Maximum Operating Temperature

150°C

Width

9.35 mm

Height

4.37mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

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Stock information temporarily unavailable.

P.O.A.

STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263

P.O.A.

STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263

Stock information temporarily unavailable.

Technical documents

Specifications

Product Type

MDmesh Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

STB11NM80

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.4Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-65°C

Typical Gate Charge Qg @ Vgs

43.6nC

Forward Voltage Vf

0.86V

Maximum Operating Temperature

150°C

Width

9.35 mm

Height

4.37mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No