Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MDmesh Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-263
Series
STB11NM80
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.4Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
43.6nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
0.86V
Maximum Operating Temperature
150°C
Height
4.37mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
Product Details
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MDmesh Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-263
Series
STB11NM80
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.4Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
43.6nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
0.86V
Maximum Operating Temperature
150°C
Height
4.37mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
Product Details
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
