STMicroelectronics STripFET II Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263

RS Stock No.: 687-5065PBrand: STMicroelectronicsManufacturers Part No.: STB120NF10T4
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Technical documents

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

STripFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

312W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

172nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Stock information temporarily unavailable.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

STMicroelectronics STripFET II Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263
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Production pack (Reel)

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Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

STMicroelectronics STripFET II Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Technical documents

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

STripFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

312W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

172nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics