STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263

RS Stock No.: 166-0942Brand: STMicroelectronicsManufacturers Part No.: STB18N60DM2
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

MDmesh DM2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

290mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

90W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Maximum Operating Temperature

150°C

Length

9.35mm

Standards/Approvals

No

Width

10.4 mm

Height

4.6mm

Automotive Standard

No

Country of Origin

China

Product details

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability
AEC-Q101 qualified

MOSFET Transistors, STMicroelectronics

Stock information temporarily unavailable.

P.O.A.

STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263

1

Available in multiples of 1000
1P.O.A.
1001P.O.A.
2001P.O.A.
3001P.O.A.
4001P.O.A.
5001P.O.A.
6001P.O.A.
7001P.O.A.
8001P.O.A.
9001P.O.A.
10001P.O.A.
11001P.O.A.
12001P.O.A.
13001P.O.A.
14001P.O.A.

P.O.A.

STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263

Stock information temporarily unavailable.

1

Available in multiples of 1000
1P.O.A.
1001P.O.A.
2001P.O.A.
3001P.O.A.
4001P.O.A.
5001P.O.A.
6001P.O.A.
7001P.O.A.
8001P.O.A.
9001P.O.A.
10001P.O.A.
11001P.O.A.
12001P.O.A.
13001P.O.A.
14001P.O.A.

Technical documents

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

MDmesh DM2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

290mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

90W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Maximum Operating Temperature

150°C

Length

9.35mm

Standards/Approvals

No

Width

10.4 mm

Height

4.6mm

Automotive Standard

No

Country of Origin

China

Product details

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability
AEC-Q101 qualified

MOSFET Transistors, STMicroelectronics