STMicroelectronics STripFET II Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-263

RS Stock No.: 165-7788Brand: STMicroelectronicsManufacturers Part No.: STB30NF10T4
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Technical documents

Specifications

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

STripFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

115W

Typical Gate Charge Qg @ Vgs

40nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.4mm

Width

9.35 mm

Height

4.6mm

Automotive Standard

No

Country of Origin

Malaysia

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Stock information temporarily unavailable.

P.O.A.

STMicroelectronics STripFET II Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-263

P.O.A.

STMicroelectronics STripFET II Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-263

Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

STripFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

115W

Typical Gate Charge Qg @ Vgs

40nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.4mm

Width

9.35 mm

Height

4.6mm

Automotive Standard

No

Country of Origin

Malaysia

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics