STMicroelectronics MDmesh M2 N-Channel MOSFET, 4.5 A, 650 V, 3-Pin D2PAK STB6N60M2

RS Stock No.: 786-3580Brand: STMicroelectronicsManufacturers Part No.: STB6N60M2
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

4.5 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.6mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.35mm

Product details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

P.O.A.

STMicroelectronics MDmesh M2 N-Channel MOSFET, 4.5 A, 650 V, 3-Pin D2PAK STB6N60M2
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 5
1P.O.A.
6P.O.A.
11P.O.A.
16P.O.A.
21P.O.A.
26P.O.A.
31P.O.A.
36P.O.A.
41P.O.A.
46P.O.A.
51P.O.A.
56P.O.A.
61P.O.A.
66P.O.A.
71P.O.A.

P.O.A.

STMicroelectronics MDmesh M2 N-Channel MOSFET, 4.5 A, 650 V, 3-Pin D2PAK STB6N60M2

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 5
1P.O.A.
6P.O.A.
11P.O.A.
16P.O.A.
21P.O.A.
26P.O.A.
31P.O.A.
36P.O.A.
41P.O.A.
46P.O.A.
51P.O.A.
56P.O.A.
61P.O.A.
66P.O.A.
71P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

4.5 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.6mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.35mm

Product details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics