STMicroelectronics Type N-Channel MOSFET, 5.8 A, 900 V Enhancement, 3-Pin TO-263
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5.8A
Maximum Drain Source Voltage Vds
900V
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
2Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
140W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
46.5nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
P.O.A.
1
P.O.A.
Stock information temporarily unavailable.
1
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5.8A
Maximum Drain Source Voltage Vds
900V
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
2Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
140W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
46.5nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details