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STMicroelectronics STripFET II N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK STB80NF10T4

RS Stock No.: 687-5080Brand: STMicroelectronicsManufacturers Part No.: STB80NF10T4
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Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Series

STripFET II

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

135 nC @ 10 V

Width

9.35mm

Transistor Material

Si

Height

4.6mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Stock information temporarily unavailable.

P.O.A.

STMicroelectronics STripFET II N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK STB80NF10T4
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

STMicroelectronics STripFET II N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK STB80NF10T4
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
2 - 8P.O.A.
10 - 18P.O.A.
20 - 48P.O.A.
50 - 98P.O.A.
100+P.O.A.

Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Series

STripFET II

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

135 nC @ 10 V

Width

9.35mm

Transistor Material

Si

Height

4.6mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics