STMicroelectronics STripFET P-Channel MOSFET, 10 A, 60 V, 3-Pin DPAK STD10P6F6
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
7.45mm
Length
6.6mm
Typical Gate Charge @ Vgs
6.4 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Height
2.38mm
Forward Diode Voltage
1.1V
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
P.O.A.
1
P.O.A.
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
7.45mm
Length
6.6mm
Typical Gate Charge @ Vgs
6.4 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Height
2.38mm
Forward Diode Voltage
1.1V
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.