STMicroelectronics STripFET Type P-Channel MOSFET, 10 A, 60 V Enhancement, 3-Pin TO-252

RS Stock No.: 165-8005Brand: STMicroelectronicsManufacturers Part No.: STD10P6F6
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Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

STripFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

160mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

30W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6.4nC

Forward Voltage Vf

-1.1V

Maximum Operating Temperature

175°C

Width

7.45 mm

Height

2.38mm

Length

6.6mm

Standards/Approvals

No

Automotive Standard

No

Country of Origin

China

Product details

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Stock information temporarily unavailable.

P.O.A.

STMicroelectronics STripFET Type P-Channel MOSFET, 10 A, 60 V Enhancement, 3-Pin TO-252

P.O.A.

STMicroelectronics STripFET Type P-Channel MOSFET, 10 A, 60 V Enhancement, 3-Pin TO-252

Stock information temporarily unavailable.

Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

STripFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

160mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

30W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6.4nC

Forward Voltage Vf

-1.1V

Maximum Operating Temperature

175°C

Width

7.45 mm

Height

2.38mm

Length

6.6mm

Standards/Approvals

No

Automotive Standard

No

Country of Origin

China

Product details

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics