Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-252
Series
STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
30W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6.4nC
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
175°C
Width
7.45 mm
Height
2.38mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
P.O.A.
1
P.O.A.
Stock information temporarily unavailable.
1
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-252
Series
STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
30W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6.4nC
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
175°C
Width
7.45 mm
Height
2.38mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
