N-Channel MOSFET Transistor, 18 A, 200 V, 3-Pin D-PAK STMicroelectronics STD20N20
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Package Type
D-PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
90 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
28 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.6mm
Width
6.2mm
Minimum Operating Temperature
-50 °C
Height
2.4mm
Product details
N-Channel MOSFETs, Discontinued
MOSFETs - N-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.
A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.
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P.O.A.
5
P.O.A.
5
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Package Type
D-PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
90 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
28 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.6mm
Width
6.2mm
Minimum Operating Temperature
-50 °C
Height
2.4mm
Product details
N-Channel MOSFETs, Discontinued
MOSFETs - N-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.
A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.