STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 2.2 A, 1 kV Enhancement, 3-Pin TO-252 STD4NK100Z

RS Stock No.: 906-2776Brand: STMicroelectronicsManufacturers Part No.: STD4NK100Z
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Technical documents

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

1kV

Package Type

TO-252

Series

MDmesh, SuperMESH

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.8Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

90W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

18nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

6.2 mm

Height

2.4mm

Length

6.6mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Country of Origin

China

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

View all in MOSFETs

Stock information temporarily unavailable.

P.O.A.

STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 2.2 A, 1 kV Enhancement, 3-Pin TO-252 STD4NK100Z
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Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 5
1P.O.A.
6P.O.A.
11P.O.A.
16P.O.A.
21P.O.A.
26P.O.A.
31P.O.A.
36P.O.A.
41P.O.A.
46P.O.A.
51P.O.A.
56P.O.A.
61P.O.A.
66P.O.A.
71P.O.A.

P.O.A.

STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 2.2 A, 1 kV Enhancement, 3-Pin TO-252 STD4NK100Z

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 5
1P.O.A.
6P.O.A.
11P.O.A.
16P.O.A.
21P.O.A.
26P.O.A.
31P.O.A.
36P.O.A.
41P.O.A.
46P.O.A.
51P.O.A.
56P.O.A.
61P.O.A.
66P.O.A.
71P.O.A.

Technical documents

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

1kV

Package Type

TO-252

Series

MDmesh, SuperMESH

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.8Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

90W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

18nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

6.2 mm

Height

2.4mm

Length

6.6mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Country of Origin

China

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics