STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-252
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
40V
Series
DeepGate, STripFET
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
6mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
36nC
Forward Voltage Vf
1.3V
Minimum Operating Temperature
-55°C
Maximum Power Dissipation Pd
70W
Maximum Gate Source Voltage Vgs
20 V
Maximum Operating Temperature
175°C
Length
6.6mm
Standards/Approvals
No
Width
6.2 mm
Height
2.4mm
Automotive Standard
AEC-Q101
Country of Origin
China
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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P.O.A.
1
P.O.A.
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1
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
40V
Series
DeepGate, STripFET
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
6mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
36nC
Forward Voltage Vf
1.3V
Minimum Operating Temperature
-55°C
Maximum Power Dissipation Pd
70W
Maximum Gate Source Voltage Vgs
20 V
Maximum Operating Temperature
175°C
Length
6.6mm
Standards/Approvals
No
Width
6.2 mm
Height
2.4mm
Automotive Standard
AEC-Q101
Country of Origin
China
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.