Dual N-Channel MOSFET, 3 A, 4 A, 5 V, 12 V, 8-Pin TSOT23-8L STMicroelectronics STEF512GR

RS Stock No.: 203-3436Brand: STMicroelectronicsManufacturers Part No.: STEF512GR
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Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

3 A, 4 A

Maximum Drain Source Voltage

5 V, 12 V

Series

E-Fuse

Package Type

TSOT23-8L

Pin Count

8

Maximum Drain Source Resistance

0.04 Ω

Maximum Gate Threshold Voltage

15V

Number of Elements per Chip

2

Transistor Material

Si

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P.O.A.

Dual N-Channel MOSFET, 3 A, 4 A, 5 V, 12 V, 8-Pin TSOT23-8L STMicroelectronics STEF512GR

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

Dual N-Channel MOSFET, 3 A, 4 A, 5 V, 12 V, 8-Pin TSOT23-8L STMicroelectronics STEF512GR
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

3 A, 4 A

Maximum Drain Source Voltage

5 V, 12 V

Series

E-Fuse

Package Type

TSOT23-8L

Pin Count

8

Maximum Drain Source Resistance

0.04 Ω

Maximum Gate Threshold Voltage

15V

Number of Elements per Chip

2

Transistor Material

Si