STMicroelectronics MDmesh M5 N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220FP STF16N65M5

RS Stock No.: 687-5291Brand: STMicroelectronicsManufacturers Part No.: STF16N65M5
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220FP

Series

MDmesh M5

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

299 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+25 V

Typical Gate Charge @ Vgs

31 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

9.3mm

Minimum Operating Temperature

-55 °C

Product details

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics

Stock information temporarily unavailable.

P.O.A.

STMicroelectronics MDmesh M5 N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220FP STF16N65M5
Select packaging type

P.O.A.

STMicroelectronics MDmesh M5 N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220FP STF16N65M5
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
2 - 8P.O.A.
10 - 18P.O.A.
20 - 48P.O.A.
50 - 98P.O.A.
100+P.O.A.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220FP

Series

MDmesh M5

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

299 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+25 V

Typical Gate Charge @ Vgs

31 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

9.3mm

Minimum Operating Temperature

-55 °C

Product details

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics