STMicroelectronics MDmesh M5 N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220FP STF16N65M5

RS Stock No.: 687-5291Brand: STMicroelectronicsManufacturers Part No.: STF16N65M5
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220FP

Series

MDmesh M5

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

299 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+25 V

Typical Gate Charge @ Vgs

31 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

9.3mm

Minimum Operating Temperature

-55 °C

Product details

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics

P.O.A.

STMicroelectronics MDmesh M5 N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220FP STF16N65M5
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P.O.A.

STMicroelectronics MDmesh M5 N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220FP STF16N65M5

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Select packaging type

Stock information temporarily unavailable.

quantityUnit price
2 - 8P.O.A.
10 - 18P.O.A.
20 - 48P.O.A.
50 - 98P.O.A.
100+P.O.A.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220FP

Series

MDmesh M5

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

299 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+25 V

Typical Gate Charge @ Vgs

31 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

9.3mm

Minimum Operating Temperature

-55 °C

Product details

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics