STMicroelectronics Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK STH150N10F7-2

RS Stock No.: 860-7523Brand: STMicroelectronicsManufacturers Part No.: STH150N10F7-2
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Technical documents

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

117nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

10.57 mm

Height

4.8mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Stock information temporarily unavailable.

P.O.A.

STMicroelectronics Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK STH150N10F7-2
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 2
1P.O.A.
3P.O.A.
5P.O.A.
7P.O.A.
9P.O.A.
11P.O.A.
13P.O.A.
15P.O.A.
17P.O.A.
19P.O.A.
21P.O.A.
23P.O.A.
25P.O.A.
27P.O.A.
29P.O.A.

P.O.A.

STMicroelectronics Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK STH150N10F7-2

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 2
1P.O.A.
3P.O.A.
5P.O.A.
7P.O.A.
9P.O.A.
11P.O.A.
13P.O.A.
15P.O.A.
17P.O.A.
19P.O.A.
21P.O.A.
23P.O.A.
25P.O.A.
27P.O.A.
29P.O.A.

Technical documents

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

117nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

10.57 mm

Height

4.8mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics