STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin H2PAK
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
10.4 mm
Height
4.8mm
Length
15.25mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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P.O.A.
1
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Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
10.4 mm
Height
4.8mm
Length
15.25mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.