N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STMicroelectronics STH3N150-2

RS Stock No.: 792-5861Brand: STMicroelectronicsManufacturers Part No.: STH3N150-2
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

1500 V

Series

MDmesh

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

29.3 nC @ 10 V

Width

15.8mm

Transistor Material

Si

Height

4.8mm

Product details

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STMicroelectronics STH3N150-2
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 1
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STMicroelectronics STH3N150-2
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 1
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

1500 V

Series

MDmesh

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

29.3 nC @ 10 V

Width

15.8mm

Transistor Material

Si

Height

4.8mm

Product details

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics